VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 31; no. 12; p. 1983
Main Authors: Banerjee, S.K., Elahy, M., Shichijo, H., Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Shah, A.H., Chatterjee, P.K., Lam, H.W., Womack, R.H.
Format: Journal Article
Language:English
Published: IEEE 01-12-1984
Online Access:Get full text
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Description
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21881