Effect of annealing on MoOx and interface properties for carrier-selective contact solar cells with different passivation layers

• Published in: Optical materials Vol. 157; p. 116333
• Main Authors: Su, Ju, Hu, Mengqi, Qu, Shiyu, Zhou, Jingxuan, Zhao, Lei, Mo, Libin, Diao, Hongwei, Wang, Wenjing, Wang, Guanghong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-11-2024
• Subjects: Annealing; Carrier selective contact solar cell; MoOx; Passivation layer; Carrier selective contact solar cell; Annealing; MoOx; Passivation layer
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2024.116333

The structural, electrical and optical properties of molybdenum oxide (MoOx) thin films prepared by magnetron sputtering are studied with annealing temperature. The interface properties of silicon with the intrinsic amorphous silicon (a-Si:H(i)) and alumina (AlOx) passivation layers are investigated by the minority carrier lifetime and implied-Voc (iVoc). The AlOx shows the better passivation properties and thermal stability for the carrier-selective contact solar cells. The Ce-doped In2O3(ICO) is deposited on the surface of MoOx thin films. It is found that the optimized annealing temperature is 125 °C for the carrier selective contact solar cells with the a-Si:H(i) passivation layer. It could increase to 175 °C for the AlOx passivation layer.
•Properties of MoOx thin films prepared by magnetic sputtering were studied.•Effect of annealing on the interface properties of silicon with different passivation layers is investigated.•AlOx showed the better passivation properties and thermal stability for CSC solar cells.