Formation of heterostructure of A3B6 semiconductor compounds by surface laser modification

Formation of heterostructure of A3B6 semiconductor compounds by surface laser modification

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Bibliographic Details
Published in:Optics and lasers in engineering Vol. 36; no. 3; pp. 299 - 302
Main Authors: GOTRA, Z, STAKHIRA, P, TOKAREV, J, PROSZAK, W
Format: Journal Article
Language:English
Published: Oxford Elsevier 01-09-2001
Subjects:
Biological and medical applications
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Industrial applications
Optics
Physics
Monocrystals
Semiconductor materials
Oxide layer
Laser materials processing
Binary compounds
Surface treatments
Laser beam applications
Cathodoluminescence
Experimental study
Gallium selenides
Pulsed lasers
Heterostructures
Online Access:Get full text
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Description
ISSN:0143-8166
1873-0302
DOI:10.1016/S0143-8166(01)00045-8