Non-volatile WORM memory device based on Moringa Oleifera Lam. for sustainable bioelectronics

• Published in: Hyperfine interactions Vol. 245; no. 1
• Main Authors: Rahman, Farhana Yasmin, Uddin, Md Jashim, Bhattacharjee Debayoti, Hussain Syed Arshad
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Nature B.V 26-09-2024
• Subjects: Conduction heating; Memory devices; Room temperature; Space charge; Spin coating
• ISSN: 0304-3843; 1572-9540
• DOI: 10.1007/s10751-024-02146-y

Natural material-based non-volatile resistive switching (RS) memory devices are considered as one of the emerging technologies for the sustainable electronics. Here, Moringa Oleifera Lam. (MO) locally called Sajna leaves are used as an active switching layer for write-once-read-many (WORM) devices. Spin coating technique has been utilized to fabricate the MO leaves based active layer upon ITO. Observed WORM memory devices showed a high memory window (103), reliable read endurance (350 times) and stable data retention behaviour up to 1.5 × 103 s at room temperature. Fitting models revealed the switching mechanisms such as Schottky Emission (SE), trap-filled space charge limited conduction (TSCLC) and Ohmic conduction are involved in the RS process. Based on the obtained results, this work suggests that MO leaves based bio-WORM could be a promising substitute for the next generation non-volatile memory applications.