Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

• Published in: Russian microelectronics Vol. 53; no. 3; pp. 252 - 259
• Main Authors: Gusev, A. S., Sultanov, A. O., Katkov, A. V., Ryndya, S. M., Siglovaya, N. V., Klochkov, A. N., Ryzhuk, R. V., Kargin, N. I., Borisenko, D. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 2024; Springer Nature B.V
• Subjects: Current carriers; Electrical Engineering; Electron gas; Engineering; Gallium nitrides; Heterostructures; High electron mobility transistors; Molecular beam epitaxy; Scattering; molecular-beam epitaxy; carrier transport; ultrathin AlN barrier; GaN
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739724600304

Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier are obtained
.
The layer resistance of the optimized structures is less than 230 Ω/□. The scattering processes that limit the mobility of a two-dimensional electron gas (2DEG) in undoped AlN/GaN HSs with an ultrathin AlN barrier are studied. It is shown that in the range of
n
s
characteristic for AlN/GaN HEMT HSs (
n
s
 > 1 × 10
13
 cm
–2
), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.