Effect of Heat-treatments on AgGaS 2 Photoluminescence

• Published in: Japanese Journal of Applied Physics Vol. 32; no. S3; p. 176
• Main Authors: Kurasawa, Tatsuru, Noda, Yasutoshi, Furukawa, Yoshitaka, Masumoto, Katashi
• Format: Journal Article
• Language: English
• Published: 30-12-1993
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAPS.32S3.176

Heat-treatments such as Ag
2
S- and Ga
2
S
3
-treatment and Ga dipping were performed and the effect was investigated by measuring the emission intensity of photoluminescence. After the Ag
2
S-treatment and Ga-dipping, the emission intensity due to free exiton significantly increased which indicates that the quality of single crystals was enhanced and the non-radiative recombination centers were reduced. By the Ga
2
S
3
-treatment, the emission intensities changed with an increase of Ga
2
S vapor pressure, which gave a clear evidence for the emission origins to be Ag and Ga vacancies. After the Ga-dipping, the intensity of red band decreased, supporting that the emission origin is the defect due to excess sulfur.