Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory

• Published in: Science and technology of advanced materials
• Main Authors: Kumar, Deepak, Ishibashi, Mio, Roy, Tufan, Tsujikawa, Masahito, Shirai, Masafumi, Mizukami, Shigemi
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 13-11-2024
• Subjects: ab-initio calculation; metastable alloy; MRAM; multilayer; thin film; Word; perpendicular magnetic anisotropy
• ISSN: 1468-6996; 1878-5514
• DOI: 10.1080/14686996.2024.2421746

A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is utilized as a barrier material of p-MTJs. Since the p-MTJ is a key device of current spintronics memory, i.e. spin-transfer-torque magnetoresistive random access memory (STT-MRAM), it attracts attention for further advance to explore new magnetic materials showing both large PMA as well as TMR. However, there have been no such materials other than FeCo(B)/MgO. Here, we report, for the first time, PMA in metastable bcc Co based alloy, i.e. bcc CoMnFe thin films which are known to exhibit large TMR effect when used for electrodes of MTJs with the MgO barrier. The largest intrinsic PMA’s were about 0.6 and 0.8 MJ/m3 in a few nm thick CoMnFe alloy film and multilayer film, respectively. Our ab-initio calculation suggested that PMA originates from tetragonal strain and the value exceeds 1 MJ/m3 with optimizing strain and alloys composition. The simulation of the thermal stability factor indicates that the magnetic properties obtained satisfy the requirement of the data retention performance of X-1X nm STT-MRAM. The large PMA and high TMR effect in bcc CoMnFe/MgO, which were rarely observed in materials other than FeCo(B)/MgO, indicate that bcc CoMnFe/MgO is one of the potential candidates of the materials for X - 1X nm STT-MRAM.