Modal phase-matching in thin-film lithium niobate waveguides for efficient generation of entangled photon pairs

Thin-film lithium niobate (TFLN) waveguides have emerged as a pivotal platform for on-chip spontaneous parametric down-conversion (SPDC), serving as a crucible for the generation of entangled photon pairs. The periodic poling of TFLN, while capable of generating high-efficiency SPDC, demands intrica...

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Bibliographic Details
Published in:Optics express Vol. 32; no. 23; p. 40629
Main Authors: Liu, Jiacheng, Duan, Jiachen, Zhu, Pingyu, Xia, Gongyu, Hong, Qilin, Zhang, Kaikai, Zhu, Zhihong, Qin, Shiqiao, Xu, Ping
Format: Journal Article
Language:English
Published: 04-11-2024
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Summary:Thin-film lithium niobate (TFLN) waveguides have emerged as a pivotal platform for on-chip spontaneous parametric down-conversion (SPDC), serving as a crucible for the generation of entangled photon pairs. The periodic poling of TFLN, while capable of generating high-efficiency SPDC, demands intricate fabrication processes that can be onerous in terms of scalability and manufacturability. In this work, we introduce a novel approach to the generation of entangled photon pairs via SPDC within TFLN waveguides, harnessing the principles of modal phase-matching (MPM). To address the challenge of efficiently exciting pump light typically in a higher-order mode, we have engineered a mode converter that couples two asymmetrically dimensioned waveguides. This converter adeptly transforms the fundamental mode into a higher-order mode, demonstrating a conversion loss of 1.55 dB at 785 nm with a 3 dB bandwidth exceeding 30 nm. Subsequently, we have showcased the device’s capabilities by characterizing the pair generation rate (PGR), coincidences-to-accidentals ratio (CAR), and spectral profile of the entangled photon source. Our findings present a simplified and versatile method for the on-chip generation of entangled photon sources, which may pave the way for the application in the realms of quantum information processing and communication technologies.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.539105