Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

• Published in: Nanoscale research letters Vol. 6; no. 1; p. 609
• Main Authors: Kumar, Mahesh, Bhat, Thirumaleshwara N, Rajpalke, Mohana K, Roul, Basanta, Kalghatgi, Ajit T, Krupanidhi, S B
• Format: Journal Article
• Language: English
• Published: New York Springer New York 28-11-2011; BioMed Central Ltd; Springer
• Subjects: Chemistry and Materials Science; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Beam Equivalent Pressure; Thermionic Emission Model; Ideality Factor; HRTEM; Current Transport Mechanism
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/1556-276X-6-609

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/
n
-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks
E
2
(high) at 490.2 cm
-1
and
A
1
(LO) at 591 cm
-1
. The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/
n
-Si heterojunction is highly sensitive to IR light.