Theoretical luminescence spectra in p-type superlattices based on InGaAsN

• Published in: Nanoscale research letters Vol. 7; no. 1; p. 607
• Main Authors: de Oliveira, Thiago F, Rodrigues, Sara CP, Scolfaro, Luísa MR, Sipahi, Guilherme M, da Silva, Eronides F
• Format: Journal Article
• Language: English
• Published: New York Springer New York 31-10-2012; BioMed Central Ltd; Springer
• Subjects: Chemistry and Materials Science; International Conference on Superlattices; Materials Science; Molecular Medicine; Nano Express; Nanochemistry; Nanodevices (ICSNN 2012); Nanoscale Science and Technology; Nanostructures; Nanotechnology; Nanotechnology and Microengineering; Dilute nitride semiconductor; Nanostructures; method; p-doped; Luminescence
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/1556-276X-7-607

In this work, we present a theoretical photoluminescence (PL) for p-doped GaAs/InGaAsN nanostructures arrays. We apply a self-consistent
k
→
p
→
method in the framework of the effective mass theory. Solving a full 8 × 8 Kane's Hamiltonian, generalized to treat different materials in conjunction with the Poisson equation, we calculate the optical properties of these systems. The trends in the calculated PL spectra, due to many-body effects within the quasi-two-dimensional hole gas, are analyzed as a function of the acceptor doping concentration and the well width. Effects of temperature in the PL spectra are also investigated. This is the first attempt to show theoretical luminescence spectra for GaAs/InGaAsN nanostructures and can be used as a guide for the design of nanostructured devices such as optoelectronic devices, solar cells, and others.