Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth tempera...

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Bibliographic Details
Published in:	Nanoscale research letters Vol. 5; no. 10; pp. 1650 - 1653
Main Authors:	Bietti, S, Somaschini, C, Sarti, E, Koguchi, N, Sanguinetti, S, Isella, G, Chrastina, D, Fedorov, A
Format:	Journal Article
Language:	English
Published:	United States BioMed Central Ltd 18-07-2010 SpringerOpen
Subjects:	III-V semiconductors Photoluminescence Quantum nanostructures Si integration
Online Access:	Get full text
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Summary:	We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
ISSN:	1931-7573 1556-276X 1556-276X
DOI:	10.1186/1556-276X-5-1650