Memristive Ising Circuits

• Main Authors: Dowling, V. J, Pershin, Y. V
• Format: Journal Article
• Language: English
• Published: 09-10-2022
• Subjects: Computer Science - Emerging Technologies; Physics - Mesoscale and Nanoscale Physics; Physics - Statistical Mechanics
• DOI: 10.48550/arxiv.2210.04257

Phys. Rev. E 106, 054156 (2022) The Ising model is of prime importance in the field of statistical mechanics.
Here we show that Ising-type interactions can be realized in
periodically-driven circuits of stochastic binary resistors with memory. A key
feature of our realization is the simultaneous co-existence of ferromagnetic
and antiferromagnetic interactions between two neighboring spins -- an
extraordinary property not available in nature. We demonstrate that the
statistics of circuit states may perfectly match the ones found in the Ising
model with ferromagnetic or antiferromagnetic interactions, and, importantly,
the corresponding Ising model parameters can be extracted from the
probabilities of circuit states. Using this finding, the Ising Hamiltonian is
re-constructed in several model cases, and it is shown that different types of
interaction can be realized in circuits of stochastic memristors.