Low temperature STM on InAs (110) accumulation surfaces

• Main Authors: Canali, L, Wildoer, J. W. G, Kerkhof, O, Kouwenhoven, L. P
• Format: Journal Article
• Language: English
• Published: 14-08-1997
• Subjects: Physics - Materials Science; Physics - Mesoscale and Nanoscale Physics
• DOI: 10.48550/arxiv.cond-mat/9708098

The properties of InAs (110) surfaces have been investigated by means of
low-temperature scanning tunneling microscopy and spectroscopy. A technique for
ex-situ sulphur passivation has been developed to form an accumulation layer on
such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D
subbands in the accumulation layer. Measurements in high-magnetic field
demonstrate Landau quantization of the energy spectrum, both in the 2D subbands
and the 3D bulk conduction band.