Manipulation of Valley Isospins in Strained Graphene for Valleytronics
Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in quantum Hall conductance oscillations due to the rotat...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Journal Article |
| Language: | English |
| Published: |
21-07-2019
|
| Subjects: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Graphene's outstanding mechanical properties lend to strain engineering,
allowing for future valleytronics and nanoelectromechanic applications. In this
work, we have found that a Gaussian-shaped strain on a graphene p-n junction
results in quantum Hall conductance oscillations due to the rotated angle
between valley isospins at the graphene armchair edges. Furthermore, additional
Fano resonances were observed as the value of the strain-induced
pseudo-magnetic field approaches that of the external magnetic field. The
lifted valley degeneracy, stemming from the interplay between the real and
pseudo-magnetic fields, results in clearly valley-resolved Fano resonances.
Exploring strain engineering as a means to control conductance through valley
isospin manipulation is believed to open the door to potential graphene
valleytronic devices. |
|---|---|
| DOI: | 10.48550/arxiv.1907.09079 |