GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

• Main Authors: Maradan, D, Casparis, L, Liu, T. -M, Biesinger, D. E. F, Scheller, C. P, Zumbühl, D. M, Zimmerman, J, Gossard, A. C
• Format: Journal Article
• Language: English
• Published: 10-01-2014
• Subjects: Physics - Mesoscale and Nanoscale Physics
• DOI: 10.48550/arxiv.1401.2330

J. Low Temp. Phys. 175, 784 (2014) We present measurements of the electron temperature using gate defined
quantum dots formed in a GaAs 2D electron gas in both direct transport and
charge sensing mode. Decent agreement with the refrigerator temperature was
observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear
demagnetization stages integrated into the sample wires below 1 mK, the device
electron temperature saturates, remaining close to 10 mK. The extreme
sensitivity of the thermometer to its environment as well as electronic noise
complicates temperature measurements but could potentially provide further
insight into the device characteristics. We discuss thermal coupling
mechanisms, address possible reasons for the temperature saturation and
delineate the prospects of further reducing the device electron temperature.