Comparing Graphene Growth on Cu(111) versus Oxidized Cu(111)

• Published in: Nano letters Vol. 15; no. 2; pp. 917 - 922
• Main Authors: Gottardi, Stefano, Müller, Kathrin, Bignardi, Luca, Moreno-López, Juan Carlos, Pham, Tuan Anh, Ivashenko, Oleksii, Yablonskikh, Mikhail, Barinov, Alexei, Björk, Jonas, Rudolf, Petra, Stöhr, Meike
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 11-02-2015
• Subjects: Letter; copper oxide; electronic properties; Graphene; ARPES; catalysis; STM; dielectric
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl5036463

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.