Developing a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use inform...
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Published in: | ACS nano Vol. 16; no. 10; pp. 17257 - 17262 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
United States
American Chemical Society
25-10-2022
American Chemical Society (ACS) |
Subjects: | |
Online Access: | Get full text |
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Summary: | Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO2 found closer to the niobium film/oxide interface and Nb2O5 found closer to the surface. In terms of structural analysis, we find that the Nb2O5 region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1–3 nm corresponding to monoclinic N–Nb2O5 that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb2O5 region with nanometer spatial resolution. Through this correlative method, we observe that the highly disordered regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 FERMILAB-PUB-22-305-SQMS-TD; arXiv:2203.08710 USDOE Office of Science (SC), High Energy Physics (HEP) National Science Foundation (NSF) AC02-07CH11359; ECCS-1542205; DMR-172013 International Institute for Nanotechnology (IIN) Keck Foundation |
ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.2c07913 |