Facile Formation of Graphene P–N Junctions Using Self-Assembled Monolayers

• Published in: Journal of physical chemistry. C Vol. 116; no. 36; pp. 19095 - 19103
• Main Authors: Baltazar, Jose, Sojoudi, Hossein, Paniagua, Sergio A, Kowalik, Janusz, Marder, Seth R, Tolbert, Laren M, Graham, Samuel, Henderson, Clifford L
• Format: Journal Article
• Language: English
• Published: Columbus, OH American Chemical Society 13-09-2012
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Physics; Self-assembly; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Specific materials; Transistors; CVD; Graphene; Field effect transistors; Position control; p n junctions; Doping; Nitrogen additions; Self-assembled layers; IV characteristic; Defects
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp3045737

Monolithic and patterned aminopropyltriethoxysilane (APTES) layers are used to create n-doped graphene, graphene p–n junctions, and FET devices containing p–n junctions in the device channel through transfer of CVD graphene onto APTES coated substrates. APTES doping is shown to not result in introduction of defects. I–V measurements of FET devices containing patterned APTES layers show it is possible to control the position of the two current minima (two Dirac points) in the ambipolar p–n junction.