Conducting Interface in Oxide Homojunction: Understanding of Superior Properties in Black TiO2

Black TiO2 nanoparticles with a crystalline core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of p...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters Vol. 16; no. 9; pp. 5751 - 5755
Main Authors: Lü, Xujie, Chen, Aiping, Luo, Yongkang, Lu, Ping, Dai, Yaomin, Enriquez, Erik, Dowden, Paul, Xu, Hongwu, Kotula, Paul G, Azad, Abul K, Yarotski, Dmitry A, Prasankumar, Rohit P, Taylor, Antoinette J, Thompson, Joe D, Jia, Quanxi
Format: Journal Article
Language:English
Published: United States American Chemical Society 14-09-2016
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Black TiO2 nanoparticles with a crystalline core and amorphous-shell structure exhibit superior optoelectronic properties in comparison with pristine TiO2. The fundamental mechanisms underlying these enhancements, however, remain unclear, largely due to the inherent complexities and limitations of powder materials. Here, we fabricate TiO2 homojunction films consisting of an oxygen-deficient amorphous layer on top of a highly crystalline layer, to simulate the structural/functional configuration of black TiO2 nanoparticles. Metallic conduction is achieved at the crystalline–amorphous homointerface via electronic interface reconstruction, which we show to be the main reason for the enhanced electron transport of black TiO2. This work not only achieves an unprecedented understanding of black TiO2 but also provides a new perspective for investigating carrier generation and transport behavior at oxide interfaces, which are of tremendous fundamental and technological interest.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
LA-UR-16-22153
AC52-06NA25396
USDOE National Nuclear Security Administration (NNSA)
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.6b02454