Effect of Seed Arrangements on the Quality of n‑Type Monolike Silicon Grown by Directional Solidification

• Published in: Crystal growth & design Vol. 16; no. 11; pp. 6641 - 6647
• Main Authors: Wu, Y. C, Lan, A, Yang, C. F, Hsu, C. W, Lu, C. M, Yang, A, Lan, C. W
• Format: Journal Article
• Language: English
• Published: American Chemical Society 02-11-2016
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/acs.cgd.6b01317

The effect of seed arrangements on the ingot quality was studied for the n-type monolike silicon grown by G1-scale directional solidification. It was found that the subgrains and defects were generated easily from the 0° tilt angle between seed plates. In constrast, the seed junction with large tilt angles had little effect on the defect generation, and the best tilt angle ranged from 10° to 30°. Except the area near the 0° tilt angle, the best lifetime of the wafer after gettering could be greater than 3 ms. Color mismatch on the appearance of the solar cell made from the wafers due to seed arrangements could be an issue in practice.