Probing Molecular Packing at Engineered Interfaces in Organic Field Effect Transistor and Its Correlation with Charge Carrier Mobility

• Published in: ACS applied materials & interfaces Vol. 7; no. 19; pp. 10169 - 10177
• Main Authors: Maheshwari, Priya, Mukherjee, Saurabh, Bhattacharya, Debarati, Sen, Shashwati, Tokas, Raj Bahadur, Honda, Yoshihide, Basu, Saibal, Padma, Narayanan, Pujari, Pradeep Kumar
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 20-05-2015
• Subjects: organic semiconductors; field effect mobility; positron annihilation spectroscopy; interface molecular packing; self-assembled monolayer
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.5b00311

Surface engineering of SiO2 dielectric using different self-assembled monolayer (SAM) has been carried out, and its effect on the molecular packing and growth behavior of copper phthalocyanine (CuPc) has been studied. A correlation between the growth behavior and performance of organic field effect transistors is examined. Depth profiling using positron annihilation and X-ray reflectivity techniques has been employed to characterize the interface between CuPc and the modified and/or unmodified dielectric. We observe the presence of structural defects or disorder due to disorientation of CuPc molecules on the unmodified dielectric and ordered arrangement on the modified dielectrics, consistent with the high charge carrier mobility in organic field effect transistors in the latter. The study also highlights the sensitivity of these techniques to the packing of CuPc molecules on SiO2 modified using different SAMs. Our study also signifies the sensitivity and utility of these two techniques in the characterization of buried interfaces in organic devices.