Terahertz Spin-Conductance Spectroscopy: Probing Coherent and Incoherent Ultrafast Spin Tunneling

Thin-film stacks F | H consisting of a ferromagnetic-metal layer F and a heavy-metal layer H are spintronic model systems. Here, we present a method to measure the ultrabroadband spin conductance across a layer X between F and H at terahertz frequencies, which are the natural frequencies of spin-tra...

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Published in:Nano letters Vol. 24; no. 26; pp. 7852 - 7860
Main Authors: Rouzegar, Reza, Wahada, Mohamed Amine, Chekhov, Alexander L., Hoppe, Wolfgang, Bierhance, Genaro, Jechumtál, Jiří, Nádvorník, Lukáš, Wolf, Martin, Seifert, Tom S., Parkin, Stuart S. P., Woltersdorf, Georg, Brouwer, Piet W., Kampfrath, Tobias
Format: Journal Article
Language:English
Published: United States American Chemical Society 03-07-2024
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Summary:Thin-film stacks F | H consisting of a ferromagnetic-metal layer F and a heavy-metal layer H are spintronic model systems. Here, we present a method to measure the ultrabroadband spin conductance across a layer X between F and H at terahertz frequencies, which are the natural frequencies of spin-transport dynamics. We apply our approach to MgO tunneling barriers with thickness d = 0-6 Å. In the time domain, the spin conductance G s has two components. An instantaneous feature arises from processes like coherent spin tunneling. Remarkably, a longer-lived component is a hallmark of incoherent resonant spin tunneling mediated by MgO defect states, because its relaxation time grows monotonically with d to as much as 270 fs at d = 6.0 Å. Our results are in full agreement with an analytical model. They indicate that terahertz spin-conductance spectroscopy will yield new and relevant insights into ultrafast spin transport in a wide range of spintronic nanostructures.
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ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.4c00498