Secondary ion mass spectrometric image depth profiling for three-dimensional elemental analysis

Multiple simultaneous depth profiles and 3-dimensional image profiles are used to analyze metal-oxide-semiconductor (MOS) integrated circuit and ion-implant samples.

Bibliographic Details

Published in:	Analytical chemistry (Washington) Vol. 54; no. 1; pp. 2 - 5
Main Authors:	Patkin, Adam J, Morrison, George H
Format:	Journal Article
Language:	English
Published:	American Chemical Society 01-01-1982
Online Access:	Get full text
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