Secondary ion mass spectrometric image depth profiling for three-dimensional elemental analysis

Secondary ion mass spectrometric image depth profiling for three-dimensional elemental analysis

Multiple simultaneous depth profiles and 3-dimensional image profiles are used to analyze metal-oxide-semiconductor (MOS) integrated circuit and ion-implant samples.

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Bibliographic Details
Published in:Analytical chemistry (Washington) Vol. 54; no. 1; pp. 2 - 5
Main Authors: Patkin, Adam J, Morrison, George H
Format: Journal Article
Language:English
Published: American Chemical Society 01-01-1982
Online Access:Get full text
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Description
Summary:Multiple simultaneous depth profiles and 3-dimensional image profiles are used to analyze metal-oxide-semiconductor (MOS) integrated circuit and ion-implant samples.
Bibliography:ark:/67375/TPS-3L5D26HF-N
istex:7C091A0570261D23526C92692B7B82C9DC92355C
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0003-2700
1520-6882
DOI:10.1021/ac00238a005