Correlation among Order−Disorder, Electronic Levels, and Photoluminescence in Amorphous CT:Sm

• Published in: Chemistry of materials Vol. 18; no. 12; pp. 2904 - 2911
• Main Authors: de Figueiredo, Alberthmeiry T, de Lazaro, Sergio, Longo, Elson, Paris, Elaine C, Varela, José A, Joya, Miryam R, Pizani, Paulo S
• Format: Journal Article
• Language: English
• Published: American Chemical Society 13-06-2006
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm060386y

Ca0.95Sm0.05TiO3 (CT:Sm) powder was prepared by the polymeric precursor method (PPM). Order−disorder at short and long range has been investigated by means of Raman spectroscopy, X-ray diffraction (XRD), and photoluminescence emission (PL) experimental techniques. The broad PL band and the Sm emission spectrum measured at room temperature indicate the increase of structural order with annealing temperature. The measured PL emission reveals that the PL intensity changes with the degree of disorder in the CT:Sm. The electronic structures were performed by the ab initio periodic method in the DFT level with the hybrid nonlocal B3LYP approximation. Theoretical results are analyzed in terms of DOS, charge densities, and Mulliken charges. Localized levels into the band gap of the CT:Sm material favor the creation of the electron−hole pair, supporting the observed room-temperature PL phenomenon.