Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′‑ReSe2

• Published in: Nano letters Vol. 17; no. 5; pp. 3202 - 3207
• Main Authors: Arora, Ashish, Noky, Jonathan, Drüppel, Matthias, Jariwala, Bhakti, Deilmann, Thorsten, Schneider, Robert, Schmidt, Robert, Del Pozo-Zamudio, Osvaldo, Stiehm, Torsten, Bhattacharya, Arnab, Krüger, Peter, Michaelis de Vasconcellos, Steffen, Rohlfing, Michael, Bratschitsch, Rudolf
• Format: Journal Article
• Language: English
• Published: American Chemical Society 10-05-2017
• Subjects: GW-BSE; excitons; polarization; transition metal dichalcogenides; anisotropy; ReSe2
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.7b00765

Atomically thin materials such as graphene or MoS2 are of high in-plane symmetry. Crystals with reduced symmetry hold the promise for novel optoelectronic devices based on their anisotropy in current flow or light polarization. Here, we present polarization-resolved optical transmission and photoluminescence spectroscopy of excitons in 1T′-ReSe2. On reducing the crystal thickness from bulk to a monolayer, we observe a strong blue shift of the optical band gap from 1.37 to 1.50 eV. The excitons are strongly polarized with dipole vectors along different crystal directions, which persist from bulk down to monolayer thickness. The experimental results are well reproduced by ab initio calculations based on the GW-BSE approach within LDA+GdW approximation. The excitons have high binding energies of 860 meV for the monolayer and 120 meV for bulk. They are strongly confined within a single layer even for the bulk crystal. In addition, we find in our calculations a direct band gap in 1T′-ReSe2 regardless of crystal thickness, indicating weak interlayer coupling effects on the band gap characteristics. Our results pave the way for polarization-sensitive applications, such as optical logic circuits operating in the infrared spectral region.