Position-Sensitive and High-Performance Photodetection Observed in Carbon NanoFilm Based on Silicon Carbide

Position-Sensitive and High-Performance Photodetection Observed in Carbon NanoFilm Based on Silicon Carbide

A high-performance photodetector is reported in a carbon/silicon carbide (SiC) structure. Besides the advantages of owning a significant amplification on photocurrent, the detector has a wide detection zone and a strong immunity to temperature variation. Demonstrated in experiments, these properties...

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Bibliographic Details
Published in:ACS applied electronic materials Vol. 1; no. 9; pp. 1924 - 1928
Main Authors: Dong, Anhua, Lai, Yihui, Liu, Shuai, Wang, Hui
Format: Journal Article
Language:English
Published: American Chemical Society 24-09-2019
Subjects:
electromagnetic field enhancement
photoelectric effect
silicon carbide
carbon
ultraviolet detection
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Summary:A high-performance photodetector is reported in a carbon/silicon carbide (SiC) structure. Besides the advantages of owning a significant amplification on photocurrent, the detector has a wide detection zone and a strong immunity to temperature variation. Demonstrated in experiments, these properties are mainly contributed by the combination of applied electric voltage and local electromagnetic field enhancement at structure surface. Because of the merits of low cost and high photoelectric performance, this structure is considered to be a promising prospect in photodetection.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.9b00416