Magnetoresistive La0.83Sr0.17MnO3 Ceramics by DAAS Technique
Manganese-based perovskites have been successfully synthesized using deposition by aqueous acetate solution (DAAS). This novel technique, which has the potential for depositing large area thin films with high throughput and low cost, involves the preparation of stoichiometric mixtures of metal−aceta...
Saved in:
Published in: | Chemistry of materials Vol. 10; no. 5; pp. 1374 - 1381 |
---|---|
Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Washington, DC
American Chemical Society
18-05-1998
|
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Manganese-based perovskites have been successfully synthesized using deposition by aqueous acetate solution (DAAS). This novel technique, which has the potential for depositing large area thin films with high throughput and low cost, involves the preparation of stoichiometric mixtures of metal−acetate precursor solutions, followed by the subsequent firing of these mixtures at relatively low temperature (600 °C) for short periods of time (<100 min), to produce crystalline lanthanum−strontium−manganate (LSMO) materials. For La0.83Sr0.17MnO3 perovskites, varying the firing temperature from 600 to 900 to 1200 °C (while maintaining a constant firing time of 100 min) results in an increase in product crystallite size (from ∼160 to ∼3300 Å), a sharpening and a shift toward higher temperatures of the metallic transition, a decrease in the material resistivity measured at 350 K (by 1 order of magnitude for each temperature studied), and a change in the XRD 2θ peaks consistent with a material phase transition. Lattice parameters, magnetic dependent resistivities, metallic and ferromagnetic transition temperatures, and magnetization values are comparable to those of LSMO materials prepared by much harsher, conventional methods. The advantages of using the DAAS technique for synthesizing manganese-based perovskites, in particular for thin/thick films, will be discussed. |
---|---|
Bibliography: | istex:8115C9BAB8DB3A69FE82E4030D010F046C1A336C ark:/67375/TPS-G27WN8KS-Z |
ISSN: | 0897-4756 1520-5002 |
DOI: | 10.1021/cm970769j |