Theoretical Understanding of the Structure–Property Relationship of Oxygen-Doped Gallium Selenide as an Efficient Photocatalyst for Oxygen Evolution Reaction
A single-layer of GaSe is widely regarded as one of the most promising photocatalysts for a solar-driven water-splitting reaction. However, its catalytic performance is limited by the high onset potential for the oxygen evolution reaction (OER). Achieving the ideal adsorption strength of each interm...
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Published in: | Journal of physical chemistry. C Vol. 128; no. 25; pp. 10397 - 10406 |
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Main Authors: | , |
Format: | Journal Article |
Language: | English |
Published: |
American Chemical Society
27-06-2024
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Subjects: | |
Online Access: | Get full text |
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Summary: | A single-layer of GaSe is widely regarded as one of the most promising photocatalysts for a solar-driven water-splitting reaction. However, its catalytic performance is limited by the high onset potential for the oxygen evolution reaction (OER). Achieving the ideal adsorption strength of each intermediate (HO*, O*, and HOO*) involved in the OER process simultaneously via the surface modification of two-dimensional (2D) materials is a significant challenge. In this study, the effects of partial replacement of Se atoms of GaSe with O atoms on the catalytic activity of the resulting 2D GaSe1–x O x surface toward OER have been systematically examined using density functional theory calculations. Our theoretical results revealed that manipulating the atomic configuration of O dopants largely improves the catalytic activity of GaSe1–x O x . When the O-dopants are separated by a −Ga–Se–Ga– unit, the OER is limited by the strong adsorption of the O* intermediate. On the contrary, when a −Ga– unit is bonded with three O-dopants, this O-saturated Ga atom serves as the best site to initiate the OER and exhibits high catalytic performance with a predicted overpotential of 0.38 V, which is comparable with the values of many state-of-the-art precise-metal-based catalysts. |
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ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/acs.jpcc.4c02153 |