Design Growth of MAPbI3 Single Crystal with (220) Facets Exposed and Its Superior Optoelectronic Properties

• Published in: The journal of physical chemistry letters Vol. 9; no. 1; pp. 216 - 221
• Main Authors: Ding, Jianxu, Jing, Lin, Cheng, Xiaohua, Zhao, Ying, Du, Songjie, Zhan, Xiaoyuan, Cui, Hongzhi
• Format: Journal Article
• Language: English
• Published: American Chemical Society 04-01-2018
• ISSN: 1948-7185; 1948-7185
• DOI: 10.1021/acs.jpclett.7b03020

MAPbI3 is deemed as the most prominent member in hybrid perovskites family because of its extremely optoelectronic properties. However, some issues and puzzles are still in expectation of their answers, such as stabilities, hysteresis, ferroelectricity, and so on. To bridge the distinctions between MAPbI3 single crystal and thin films, large-size single crystals are demanded. On the contrary, crystal structure anisotropy-dependent optoelectronic properties is an inevitable topic. A series of large-size MAPbI3 single crystals with (220) facets exposed were successfully grown, using high concentration solutions and large-size seed crystals to match growth rates of (100) and (220) facets. The optoelectronic properties of photocurrents, responsivity, EQE, and detectivity clearly showed significant anisotropy of optoelectronic properties in MAPbI3 single crystal. According to ion migration theory, the anisotropy of optoelectronic properties was interpreted. We hope this result will be helpful to guide oriented growth MAPbI3 thin films.