一种新型自毁芯片监测和执行电路的设计
TN409; 针对当前自毁技术中,自毁监测方式单一且自毁执行较长和自毁不彻底、不稳定导致自毁成功率较低的问题,设计了一种同时具备自毁实时监测和执行的电路系统.该电路系统设计了封装拆卸和上电时序两种自毁监测方式,使自毁监测的方式更加多样,提高结果的准确性.同时利用MOS管作为开关特性,来减少自毁执行的时间.实验结果表明,该电路系统在3.3V的供电电压且钽电容存储电压为20 V时,可以通过自毁监测电路对工作芯片进行实时的监测,同时经过测试表明,从监测到自毁信号到自毁执行开始,需要时间为0.28 ms....
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| Published in: | 电子技术应用 Vol. 48; no. 2; pp. 23 - 27 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | Chinese |
| Published: |
南开大学电子信息与光学工程学院,天津300350
2022
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| Abstract | TN409; 针对当前自毁技术中,自毁监测方式单一且自毁执行较长和自毁不彻底、不稳定导致自毁成功率较低的问题,设计了一种同时具备自毁实时监测和执行的电路系统.该电路系统设计了封装拆卸和上电时序两种自毁监测方式,使自毁监测的方式更加多样,提高结果的准确性.同时利用MOS管作为开关特性,来减少自毁执行的时间.实验结果表明,该电路系统在3.3V的供电电压且钽电容存储电压为20 V时,可以通过自毁监测电路对工作芯片进行实时的监测,同时经过测试表明,从监测到自毁信号到自毁执行开始,需要时间为0.28 ms. |
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| AbstractList | TN409; 针对当前自毁技术中,自毁监测方式单一且自毁执行较长和自毁不彻底、不稳定导致自毁成功率较低的问题,设计了一种同时具备自毁实时监测和执行的电路系统.该电路系统设计了封装拆卸和上电时序两种自毁监测方式,使自毁监测的方式更加多样,提高结果的准确性.同时利用MOS管作为开关特性,来减少自毁执行的时间.实验结果表明,该电路系统在3.3V的供电电压且钽电容存储电压为20 V时,可以通过自毁监测电路对工作芯片进行实时的监测,同时经过测试表明,从监测到自毁信号到自毁执行开始,需要时间为0.28 ms. |
| Author | 马伟 高清运 胡长征 胡伟波 |
| AuthorAffiliation | 南开大学电子信息与光学工程学院,天津300350 |
| AuthorAffiliation_xml | – name: 南开大学电子信息与光学工程学院,天津300350 |
| Author_FL | Gao Qingyun Ma Wei Hu Weibo Hu Changzheng |
| Author_FL_xml | – sequence: 1 fullname: Hu Changzheng – sequence: 2 fullname: Ma Wei – sequence: 3 fullname: Gao Qingyun – sequence: 4 fullname: Hu Weibo |
| Author_xml | – sequence: 1 fullname: 胡长征 – sequence: 2 fullname: 马伟 – sequence: 3 fullname: 高清运 – sequence: 4 fullname: 胡伟波 |
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| Keywords | 自毁芯片;实时自毁监测;自毁行 |
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| Title | 一种新型自毁芯片监测和执行电路的设计 |
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