X-ray Characterizations of Exfoliated MoS 2 Produced by Microwave-Assisted Liquid-Phase Exfoliation
An X-ray analysis of exfoliated MoS , produced by means of microwave-assisted liquid-phase exfoliation (LPE) from bulk powder in 1-methyl-2-pyrrolidone (NMP) or acetonitrile (ACN) + 1-methyl-2-pyrrolidone (NMP) solvents, has revealed distinct structural differences between the bulk powder and the mi...
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Published in: | Materials Vol. 17; no. 16 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Switzerland
06-08-2024
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Subjects: | |
Online Access: | Get full text |
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Summary: | An X-ray analysis of exfoliated MoS
, produced by means of microwave-assisted liquid-phase exfoliation (LPE) from bulk powder in 1-methyl-2-pyrrolidone (NMP) or acetonitrile (ACN) + 1-methyl-2-pyrrolidone (NMP) solvents, has revealed distinct structural differences between the bulk powder and the microwave-exfoliated samples. Specifically, we performed X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements to identify the elements of our exfoliated sample deposited on a Si substrate by drop-casting, as well as their chemical state and its structural crystalline phase. In the exfoliated sample, the peaks pattern only partially resemble the theoretical Miller indices for MoS
. In contrast, the bulk powder's spectrum shows the characteristic peaks of the 2H polytype of MoS
, but with some broadening. Notable is the retention of partial crystallinity in the post-exfoliation phases, specifically in the normal-to-plane orientation, thus demonstrating the effectiveness of microwave-assisted techniques in producing 2D MoS
and attaining desirable properties for the material. XPS measurements confirm the success of the exfoliation procedure and that the exfoliated sample retains its original structure. The exfoliation process has been optimized to maintain the structural integrity of MoS
while enhancing its surface area and electrochemical performance, thereby making it a promising material for advanced electronic and optoelectronic applications ranging from energy storage to sensing devices under ambient conditions. |
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ISSN: | 1996-1944 1996-1944 |