Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- mu hbox m Buffer Thickness by Local Substrate Removal

• Published in: IEEE electron device letters Vol. 32; no. 1; pp. 30 - 32
• Main Authors: Srivastava, Puneet, Das, Jo, Visalli, Domenica, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Lenci, Silvia, Geens, Karen, Cheng, Kai, Leys, Maarten, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf
• Format: Journal Article
• Language: English
• Published: 01-01-2011
• Subjects: Aluminum gallium nitrides; Breakdown; Buffers; Devices; Electric potential; Gallium nitrides; Silicon substrates; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2010.2089493

In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on the highest ever achieved breakdown voltage ( V rm BD ) of AlGaN/GaN/AlGaN double-heterostructure FETs on a Si (111) substrate with only 2- mu hbox m -thick AlGaN buffer. Before local Si removal, V rm BD saturates at similar to 700 V at a gate-drain distance ( L rm GD ) greater than or equal to hbox 8 Unknown character mu hbox m . However, after etching away the substrate locally, we measure a record V rm BD of 2200 V for the devices with L rm GD = hbox 20 Unknown character mu hbox m . Moreover, from Hall measurements, we conclude that the local substrate removal integration approach has no impact on the 2-D electron gas channel properties.