Growth of spectroscopic grade Cd(0.9)Zn(0.1)Te:In by THM technique
Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd(0.9)Zn(0.1)Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2x10(10) [Omega] cm and mobility life time product of electrons of 4-7x10(-3) cm(2)/V. A quasi-hemispheric...
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| Published in: | Journal of crystal growth Vol. 312; no. 1; pp. 33 - 36 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
15-12-2009
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| Online Access: | Get full text |
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| Summary: | Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd(0.9)Zn(0.1)Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2x10(10) [Omega] cm and mobility life time product of electrons of 4-7x10(-3) cm(2)/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the (137)Cs 662 keV gamma line at room temperature for the as-grown THM samples. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 content type line 23 ObjectType-Feature-1 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2009.09.035 |