High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HYPE Process

A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE) process. The thermal diffusivity of the single crystal has been measured using a vertical-type laser flash method. The thermal expansion was measured using a dilatometer in o...

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Bibliographic Details

Published in:	Materials transactions Vol. 48; no. 10; pp. 2782 - 2786
Main Authors:	Shibata, Hiroyuki, Waseda, Yoshio, Ohta, Hiromichi, Kiyomi, Kazumasa, Shimoyama, Kenji, Fujito, Kenji, Nagaoka, Hirobumi, Kagamitani, Yuji, Simura, Rayko, Fukuda, Tsuguo
Format:	Journal Article
Language:	English
Published:	01-10-2007
Online Access:	Get full text
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