Cathodolumjnescence study of micro-crack-induced stress relief for AlN films on Si(111)

Spatially, spectrally, and depth-resolved cathodoluminescence (CL) measurements were performed for high-quality thin AlN films grown on Si(lll). CL spectra exhibited a sharp peak at 5.960 eV, corresponding to the near-band-edge excitonic emission of AlN. Depth-resolved CL analysis showed that deep l...

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Bibliographic Details

Published in:	Journal of electronic materials Vol. 35; no. 12; pp. L15 - L19
Main Authors:	Sarusi, G, Moshe, O, Khatsevich, S, Rich, D H, Salzman, J, Meyler, B, Shandalov, M, Golan, Y
Format:	Journal Article
Language:	English
Published:	01-12-2006
Online Access:	Get full text
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