Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO sub(2) interface defects

• Published in: Thin solid films Vol. 350; no. 1; pp. 147 - 152
• Main Author: Gadiyak, G V
• Format: Journal Article
• Language: English
• Published: 01-01-1999
• ISSN: 0040-6090

A simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO sub(2) interface, such as P sub(b) - centers, during vacuum thermal annealing has been suggested, his model considers reactions of hydrogen with defect states at the Si/SiO sub(2) interface and diffusion of liberated atomic and molecular hydrogen in a silicon dioxide film. The rate constants were calculated in diffusion approximation. A good agreement was obtained between the experimental and numerical simulation results for oxides with different thickness (204-1024 angstroms), grown, both, (111) and (100) samples and annealed in the temperature range (480-700 degree C).