Epitaxial Growth of Ba sub 1--x K sub x BiO sub 3 Thin Films by High-Pressure Reactive Radio Frequency-Magnetron Sputtering

Epitaxial Growth of Ba sub 1--x K sub x BiO sub 3 Thin Films by High-Pressure Reactive Radio Frequency-Magnetron Sputtering

Epitaxial growth of Ba sub 1--x K sub x BiO sub 3 (110) thin films has been carried out on SrTiO sub 3 (110) substrates using reactive rf-magnetron sputtering for the first time under a 80 Pa discharge gas which is of a rather higher pressure than is usual. Electrical measurements showed that T sub...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics, Letters (Japan) Vol. 30; no. 8B; pp. L1480 - L1482
Main Authors: Takahashi, K, Iyori, M, Kamino, M, Usuki, T, Yoshisato, Y, Nakano, S
Format: Journal Article
Language:English
Published: 15-08-1991
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Epitaxial growth of Ba sub 1--x K sub x BiO sub 3 (110) thin films has been carried out on SrTiO sub 3 (110) substrates using reactive rf-magnetron sputtering for the first time under a 80 Pa discharge gas which is of a rather higher pressure than is usual. Electrical measurements showed that T sub c of as-grown films was 16K. A preferred orientation of (110) and epitaxial growth of the Ba--K--Bi--O film on the substrates were confirmed by XRD (X-ray diffraction) and RHEED (reflection high-energy electron diffraction), respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-1
ISSN:0021-4922