Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd sub(2)O sub(3) as Gate Dielectric

Thermal stability of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd sub(2)O sub(3) is investigated by means of different thermal tests. DC and pulsed $I$ - $V$ characterization of the devices before and after the processes shows that the device...

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Bibliographic Details

Published in:	IEEE transactions on electron devices Vol. 63; no. 7; pp. 2729 - 2734
Main Authors:	Gao, Zhan, Romero, Maria Fatima, Pampillon, Maria Angela, San Andres, Enrique, Calle, Fernando
Format:	Journal Article
Language:	English
Published:	01-07-2016
Subjects:	Aluminum gallium nitrides Devices Dielectrics Diodes Gallium nitrides Thermal stability Threshold voltage Trapping
Online Access:	Get full text
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