Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd sub(2)O sub(3) as Gate Dielectric

• Published in: IEEE transactions on electron devices Vol. 63; no. 7; pp. 2729 - 2734
• Main Authors: Gao, Zhan, Romero, Maria Fatima, Pampillon, Maria Angela, San Andres, Enrique, Calle, Fernando
• Format: Journal Article
• Language: English
• Published: 01-07-2016
• Subjects: Aluminum gallium nitrides; Devices; Dielectrics; Diodes; Gallium nitrides; Thermal stability; Threshold voltage; Trapping
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2016.2564301

Thermal stability of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) and diodes using Gd sub(2)O sub(3) is investigated by means of different thermal tests. DC and pulsed $I$ - $V$ characterization of the devices before and after the processes shows that the devices with Gd sub(2)O sub(3) dielectric layer have more than three orders of magnitude lower leakage current, higher ON/OFF ratio of about $108}$ , and better thermal stability after the long thermal storage test (500 degree C, 8 days) compared with conventional devices. In addition, no hysteresis and a stable threshold voltage were observed after a short thermal test (500 degree C, 5 min) in the MOS diodes, in good agreement with the lower trapping effects observed in the MOS-HEMTs.