Effect of porous silicon buffer under different porosities on lateral overgrowth of TiO sub(2) nanorods on silicon substrate

• Published in: Journal of alloys and compounds Vol. 681; pp. 421 - 425
• Main Authors: Rahmani, N, Dariani, R S
• Format: Journal Article
• Language: English
• Published: 05-10-2016
• Subjects: Arrays; Bonding; Buffers; Nanorods; Porosity; Porous silicon; Roughness; Titanium dioxide
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2016.04.234

Hydrothermal growth of TiO sub(2) nanorods (NRs) on silicon with and without porous silicon buffer was reported. Lattice parameter and elastic properties of the PS buffer layers have been studied using high resolution X-ray diffraction measurements. The present work deals with how tensile strains, arising from the Sisingle bond H groups at the surface of PS, affect the growth and the lattice deformation of the TiO sub(2) NRs, along to what makes excessive etching unsuitable for the work. Increasing the porosity of the PS buffers up to 58% leads to a more aligned and dense array of the NRs. This result can be attributed to enhanced roughness and reduced Young's modulus of the PS buffers. But the trend is not observed for higher porosity buffers because of their higher fragility. Also, according to the XRD measurement, crystalline quality of the TiO sub(2) NRs is affected by the buffer porosity.