Demonstration of Defect-Free and Composition Tunable Ga sub(x)In sub(1-x)Sb Nanowires

• Published in: Nano letters Vol. 12; no. 9; pp. 4914 - 4919-4914-4919
• Main Authors: Ghalamestani, Sepideh Gorji, Ek, Martin, Ganjipour, Bahram, Thelander, Claes, Johansson, Jonas, Caroff, Philippe, Dick, Kimberly A
• Format: Journal Article
• Language: English
• Published: 02-09-2012
• Subjects: Blends; Crystal structure; Electrical properties; Infrared; Nanoparticles; Nanostructure; Nanowires; Tuning; Zinc
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl302497r

The Ga sub(x)In sub(1-x)Sb ternary system has many interesting material properties, such as high carrier mobilities and a tunable range of bandgaps in the infrared. Here we present the first report on the growth and compositional control of Ga sub(x)In sub(1-x)Sb material grown in the form of nanowires from Au seeded nanoparticles by metalorganic vapor phase epitaxy. The composition of the grown Ga sub(x)In sub(1-x)Sb nanowires is precisely controlled by tuning the growth parameters where x varies from 1 to 0.3. Interestingly, the growth rate of the Ga sub(x)In sub(1-x)Sb nanowires increases with diameter, which we model based on the Gibbs-Thomson effect. Nanowire morphology can be tuned from high to very low aspect ratios, with perfect zinc blende crystal structure regardless of composition. Finally, electrical characterization on nanowire material with a composition of Ga sub(0.6)In sub(0.4)Sb showed clear p-type behavior.