Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se sub(2) solar cells

• Published in: Japanese Journal of Applied Physics Vol. 53; no. 5S1; pp. 05FW08 - 1-05FW08-4
• Main Authors: Kawakita, Shirou, Imaizumi, Mitsuru, Ishizuka, Shogo, Shibata, Hajime, Niki, Shigeru, Okuda, Shuichi, Kusawake, Hiroaki
• Format: Journal Article
• Language: English
• Published: 01-01-2014
• Subjects: COPPER INDIUM SELENIDE; COPPER SELENIDE; Defects; Density; Displacement; Electroluminescence; Electron irradiation; Emission; EMISSIONS; Equivalence; IRRADIATION; LUMINESCENCE; Photovoltaic cells; RADIATION; Solar cells
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.53.05FW08

Cu(In,Ga)Se sub(2) (CIGS) solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cells, to reveal created radiation defects. The electron irradiation increased electroluminescence (EL) emission intensity from the CIGS cells with similar behavior to light soaking. A hundred keV electrons also increased the EL intensity without producing displacement defects. Both the 100 and 250 keV electrons increased the effective acceptor density and improved cell performance. Since these phenomena have been reported as a light-soaking effect for CIGS solar cells, electron radiation effects with less than 250 keV for CIGS solar cells are thought to be equivalent to the light-soaking effect.