XPS of Impurities Influence on Electronic Structure of Sn sub(2)P sub(2)S sub(6) Ferroelectrics

• Published in: Ferroelectrics Vol. 418; no. 1; pp. 134 - 142
• Main Authors: Grigas, J, Talik, E, Glukhov, K, Fedyo, K, Stoika, I, Gurzan, M, Prits, I, Grabar, A, Vysochanskii, Yu
• Format: Journal Article
• Language: English
• Published: 01-01-2011
• Subjects: Donors (electronic); Electronic structure; Ferroelectric materials; Germanium; Impurities; Spectra; Valence band; X-ray photoelectron spectroscopy
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150193.2011.578984

Influence of impurities of In, Te and Ge on the core level binding energies and the electronic structure of the valence band of Sn sub(2)P sub(2)S sub(6) ferroelectric crystals was investigated by X-ray photoelectron spectroscopy together with electron spectra first-principles calculations. It was found that the indium impurity induces donor states, the tellurium impurity modifies energy structure near the top of valence band, and germanium impurity improves stereoactivity of the cation sublattice that is related to the ferroelectric phase transition nature.