Influence of Pb(In^sub 1/2^Nb^sub 1/2^)O^sub 3^ on the Phase Transitions, Electrical, and Thermal Properties of a PbZrO^sub 3^ Ceramic
The solid solution of a ... (PZ-PIN) system, with x=0.00-0.50, was synthesized using the wolframite precursor method. The effects of the PIN content on the crystal structure, and the electrical and thermal properties of a ... ceramic were investigated using X-ray diffraction, dielectric spectroscopy...
Saved in:
Published in: | Journal of the American Ceramic Society Vol. 94; no. 10; p. 3397 |
---|---|
Main Authors: | , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Columbus
Wiley Subscription Services, Inc
01-10-2011
|
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The solid solution of a ... (PZ-PIN) system, with x=0.00-0.50, was synthesized using the wolframite precursor method. The effects of the PIN content on the crystal structure, and the electrical and thermal properties of a ... ceramic were investigated using X-ray diffraction, dielectric spectroscopy, hysteresis measurement, and differential scanning calorimetry techniques. Furthermore, the morphology and grain size were determined using scanning electron microscopy. The results indicated that the pure perovskite phase was obtained for all compositions, and the solid solution, PZ-PIN, changed from orthorhombic to rhombohedral symmetry when the amount of PIN increased. A ferroelectric intermediate phase began to appear between the paraelectric and the antiferroelectric phases of pure PZ, with increasing PIN content. The temperature range width of the ferroelectric phase also increased continuously with increasing PIN. At room temperature, the polymorphic phase transition (PPT) was identified from the orthorhombic to the rhombohedral phase in (1-x)PZ-xPIN at the composition, x=0.40. The ceramics (x=0.40) with PPT close to room temperature exhibited excellent electrical properties ... (ProQuest: ... denotes formulae/symbols omitted.) |
---|---|
ISSN: | 0002-7820 1551-2916 |