Impact of Temperature on the Resistive Switching Behavior of Embedded [Formula Omitted]-Based RRAM Devices

• Published in: IEEE transactions on electron devices Vol. 58; no. 9; p. 3124
• Main Authors: Walczyk, Christian, Walczyk, Damian, Schroeder, Thomas, Bertaud, Thomas, Sowinska, Malgorzata, Lukosius, Mindaugas, Fraschke, Mirko, Wolansky, Dirk, Tillack, Bernd, Miranda, Enrique, Wenger, Christian
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-09-2011
• Subjects: Semiconductors; Temperature effects
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2160265

Back-end-of-line integrated [Formula Omitted] MIM memory devices in a 0.25-[Formula Omitted] complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent [Formula Omitted]-[Formula Omitted] characteristics in fresh devices are attributed to the Poole-Frenkel mechanism with an extracted trap energy level at [Formula Omitted] below the [Formula Omitted] conduction band. The trap level is associated with positively charged oxygen vacancies. The electroformed memory cells show a stable bipolar switching behavior in the temperature range from 213-413 K. The off -state current increases with temperature, whereas the on-state current can be described by a weak metallic behavior. Furthermore, the results suggest that the [Formula Omitted]-[Formula Omitted] cycling not only induces significant changes in the electrical properties of the MIM memory devices, i.e., the increase in the off-state current, but also stronger temperature dependence. The temperature effect on the on-state and off-state characteristics is modeled within the framework of the quantum point-contact model for dielectric breakdown using an effective temperature-dependent confinement potential.