Magnetic and electrical characterization of ultrathin metal-semiconductor films and devices
Thin metal films deposited on semiconductors are of fundamental importance for a wide range of magnetic and electronic devices. Our understanding of the magnetic and electronic properties of extremely thin metallization layers is incomplete, specifically with respect to the performance of films belo...
Saved in:
| Main Author: | |
|---|---|
| Format: | Dissertation |
| Language: | English |
| Published: |
ProQuest Dissertations & Theses
01-01-1998
|
| Subjects: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Thin metal films deposited on semiconductors are of fundamental importance for a wide range of magnetic and electronic devices. Our understanding of the magnetic and electronic properties of extremely thin metallization layers is incomplete, specifically with respect to the performance of films below 100 A. To this end, a novel experimental system was designed and built to study the magneto-optic and electrical behavior of several systems. One significant feature was the development of a technique to create reliable electrical contacts to very thin metal films on a semiconductor using a microfabricated device structure. The thickness dependent magnetic properties of iron films and the electrical properties of Schottky barriers formed from iron, and copper films ranging from 10 A to 100 A on Si(111) were studied under UHV conditions. These ultrathin film Schottky barrier devices were used as sensors for testing the hypothesis that electron hole pairs will be generated from gas adsorption on a metal film through non-adiabatic energy transfer. A flux dependent signal in agreement with electron-hole pair generation on gas adsorption has been observed for the first time. |
|---|---|
| ISBN: | 9780591946888 0591946882 |