Synthesis of Alloyed Cd x Zn1- x S Quantum Dots for Photovoltaic Applications

• Published in: IEEE journal of photovoltaics Vol. 10; no. 5; p. 1319
• Main Authors: Solis, Omar E, Rivas, Jesus Manuel, Lopez-Luke, Tzarara, Zarazua, Isaac, de la Torre, Jorge, Esparza, Diego
• Format: Journal Article
• Language: English
• Published: Piscataway The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01-01-2020
• Subjects: Alloying; Circuits; Configurations; Electrical properties; Electrochemical impedance spectroscopy; Open circuit voltage; Optical properties; Quantum dots; Quantum efficiency; Short circuit currents; Synthesis; Titanium dioxide; Zinc sulfide
• ISSN: 2156-3381; 2156-3403
• DOI: 10.1109/JPHOTOV.2020.2987181

This article describes the synthesis of Cd x Zn1- x S quantum dots prepared using the successive ionic layer adsorption and reaction method and incorporated into a photovoltaic device. The Cd x Zn1- x S quantum dots exhibit good optical and electrical properties. The photovoltaic device has the configuration TiO2/Cd0.75Zn0.25S1/ZnS. A photoconversion efficiency of 3.6% was obtained with this device. This efficiency corresponds to a 16% relative increment compared with a reference sample with the configuration TiO2/Cd1Zn0S1/ZnS. The improvement is associated with an increment in the open-circuit voltage ( V oc) from 0.517 to 0.725 V. The corresponding short-circuit current density ( J sc) was reduced from 12.15 to 11.66 mA cm−2. Electrochemical impedance spectroscopy analyses confirm that the behavior of the device was due to a recombination rate reduction obtained as a result of surface passivation between the TiO2 layer and the CdxZnx-1S QDs interface.