Atomic layer deposition and properties of mixed Ta2O5and ZrO2 films

Atomic layer deposition and properties of mixed Ta2O5and ZrO2 films

Thin solid films consisting of ZrO2 and Ta2O5were grown byatomic layerdeposition at 300 °C. Ta2O5films dopedwith ZrO2, TaZr2.75O8 ternary phase, or ZrO2doped with Ta2O5 were grown to thickness andcomposition depending on the number and ratio of alternating ZrO2 andTa2O5deposition cycles.All the film...

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Bibliographic Details
Published in:AIP advances Vol. 7; no. 2
Main Authors: Kemell Marianna, Vehkamäki Marko, Heikkilä, Mikko J, Mizohata Kenichiro, Kalam Kristjan, Ritala Mikko, Leskelä Markku, Kundrata Ivan, Fröhlich Karol
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 01-02-2017
Subjects:
Atomic layer epitaxy
Tantalum
Tantalum oxides
Ternary systems
Thin films
Zirconium dioxide
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Summary:Thin solid films consisting of ZrO2 and Ta2O5were grown byatomic layerdeposition at 300 °C. Ta2O5films dopedwith ZrO2, TaZr2.75O8 ternary phase, or ZrO2doped with Ta2O5 were grown to thickness andcomposition depending on the number and ratio of alternating ZrO2 andTa2O5deposition cycles.All the filmsgrown exhibitedresistiveswitching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops.The most reliable windows between high and low resistive states were observed in Ta2O5films mixedwith relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.
ISSN:2158-3226
DOI:10.1063/1.4975928