Kinetics of Vacancy Doping in SrTiO^sub 3^ Studied by in situ Electrical Resistivity

The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity...

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Bibliographic Details
Published in:	Materials research (São Carlos, São Paulo, Brazil) Vol. 21; no. 4; p. 1
Main Authors:	Oliveira, Felipe Souza, Favero, Ana Carolina, Renosto, Sergio Tuan, da Luz, Mário Sérgio, Moreira dos Santos, Carlos Alberto
Format:	Journal Article
Language:	English
Published:	Sao Carlos Universidade Federal do Sao Carlos, Departamento de Engenharia de Materiais 01-01-2018
Subjects:	Annealing Crystal growth Doping Electrical resistivity Single crystals Strontium titanates Vacancies
Online Access:	Get full text
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Summary:	The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.
ISSN:	1516-1439 1980-5373